silicon n channel mos type (dtmos ? ) TK12P60W switching regulator applications ? low drain-source on-resistance : r ds (on) = 0.256
(typ.) by used to super junction structure : dtmos ? easy to control gate switching ? enhancement-mode: v th = 2.7 to 3.7 v (v ds = 10 v, i d = 0.6 ma) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss 600 v gate-source voltage v gss 30 v drain current (continuous) (note 1) i d 11.5 a drain current (pulsed) (note 1) i dp 46.0 a drain power dissipation (tc = 25c) p d 100 w single pulse avalanche energy (note 2) e as 93 mj avalanche current i ar 5.8 a drain reverse current (continuous) (note 1) i dr 11.5 a drain reverse current (pulsed) (note 1) i drp 46.0 a channel temperature t ch 150 c storage temperature range t stg -55 to 150 c note: using continuously under heavy loads (e.g. the a pplication of high temperature/current/voltage and the significant change in temperature, et c.) may cause this product to decreas e in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods??) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). thermal characteristics characteristics symbol max unit thermal resistance, channel to case r th (ch-c) 1.25 c/w note 1: ensure that the channel temperature does not exceed 150c. note 2: v dd = 90 v, t ch = 25c (initial), l = 4.83 mh, r g = 25 ? , i ar = 5.8 a this transistor is an electrostatic-sensitive device. handle with care. unit: mm + 0.25 ? 0.12 1.52 6.1 0.12 5.34 0.13 2.29 1 3 + 0.4 ? 0.6 10.0 6.6 0.2 2 0.76 0.12 1.14max 1.01max 2.3 0.1 0.58max 0.07 0.07 1.08 ? 0.2 1. gate 2. drain heat sink 3. source jedec ? jeita ? toshiba 2-7k1a weight : 0.36 g (typ.) 1 3 2 internal connection www.freescale.net.cn www.freescale.net.cn 1/5
electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 30 v, v ds = 0 v ? ? 1 a drain cut-off current i dss v ds = 600 v, v gs = 0 v ? ? 100 a drain-source breakdown voltage v (br) dss i d = 10 ma, v gs = 0 v 600 ? ? v gate threshold voltage v th v ds = 10 v, i d = 0.6 ma 2.7 ? 3.7 v drain-source on-resistance r ds (on) v gs = 10 v, i d = 5.8 a ? 0.265 0.30 ? input capacitance c iss ? 890 ? reverse transfer capacitance c rss ? 2.8 ? output capacitance c oss v ds = 300 v, v gs = 0 v, f = 1 mhz ? 23 ? pf effective output capacitance c o(er) v ds = 0 to 400 v, v gs = 0 v ? 41 ? pf gate resistance rg v ds = open, f = 1mhz ? 6.9 ? ? rise time t r ? 23 ? turn-on time t on ? 45 ? fall time t f ? 6 ? switching time turn-off time t off duty 1%, t w = 10 s ? 85 ? ns total gate charge q g ? 25 ? gate-source charge1 q gs1 ? 5.5 ? gate-drain charge q gd v dd 400 v, v gs = 10 v, i d = 11.5 a ? 11 ? nc mosfet turn-off dv/dt capability dv/dt v dd = 0 to 400 v, i d = 5.8 a 50 ? ? v/ns source-drain characteristics (ta = 25c) characteristics symbol test condition min typ. max unit forward voltage (diode) v dsf i dr = 11.5 a, v gs = 0 v ? ? ? 1.7 v reverse recovery time t rr ? 380 ? ns reverse recovery charge q rr ? 3.8 ? c reverse recovery peak current i rr i dr = 11.5 a, v gs = 0 v, -di dr /dt = 100 a/ s ? 25 ? a reverse diode dv/dt capability dv/dt i dr = 11.5 a, v gs = 0 v, v dd = 400 v 15 ? ? v/ns marking r l = 69 ? 0 v 10 v v gs v dd 400 v i d = 5.8 a v out 10 ? TK12P60W lot no. part no. (or abbreviation code) www.freescale.net.cn www.freescale.net.cn 2/5
0.01 0.1 1 100 10 0 4 6 8 0 i d = 11.5 a 4 8 12 16 20 2.9 5.8 2 10 0 2 4 6 8 v gs = 5 v 10 7 6.5 0 1 2 3 4 5 v gs = 5 v 6 6.5 7 8 10 7.5 8 10 7.5 5.5 6 5.5 500 700 540 620 580 660 ? 100 ? 50 0 50 100 150 200 0 2 r ds(on) ? i d v ds ? v gs i d ? v ds v dss ? t a i d ? v ds i d ? v gs common source t a = 25c pulse test common source t a = 25c pulse test common source v ds = 10 v t a = 25c pulse test common source t a = 25c pulse test common source v gs = 10 v t a = 25c pulse test drain current i d (a) drain-source voltage v ds (v) drain current i d (a) drain-source voltage v ds (v) drain current i d (a) gate-source voltage v gs (v) drain-source voltage v ds (v) gate-source voltage v gs (v) drain-source voltage v dss (v) ambient temperature t a (c) drain-source on-resistance r ds(on) ( ? ) drain current i d (a) common source v gs = 0 v i d = 10 ma pulse test 0.1 9 9 4 6 8 10 0 2 4 6 10 8 0 4 8 12 20 16 0 4 8 12 20 16 1 www.freescale.net.cn www.freescale.net.cn 3/5
1 0.1 10 100 1000 1 10 100 c iss c oss c rss 1000 0 0.1 ? 0.4 1 100 ? 0.8 ? 1.2 ? 1.6 ? 2 i d = 2.9 a 11.5 5.8 10 0 100 200 300 400 500 500 200 100 300 400 0 20 8 4 12 16 0 v dd 400 v v gs v ds ? 80 ? 40 0 40 80 120 160 0 1 2 3 5 ? 80 ? 40 0 40 80 120 160 4 10000 output capacitance stored energy e oss ( j) drain-source voltage v ds (v) e oss ? v ds r ds(on) ? t a v th ? t a i dr ? v ds common source v gs = 10 v pulse test common source v gs = 0 v t a = 25c pulse test common source v gs = 0 v f = 1 mhz t a = 25c common source v ds = 10 v i d = 0.6 ma pulse test common source i d = 11.5 a t a = 25c pulse test c ? v ds gate threshold voltage v th (v) drain-source voltage v ds (v) reverse drain current i dr (a) drain-source voltage v ds (v) capacitance c (pf) ambient temperature t a (c) drain-source voltage v ds (v) gate-source voltage v gs (v) total gate charge q g (nc) dynamic input/output characteristics drain-source on-resistance r ds(on) ( ? ) ambient temperature t a (c) 100000 0 2 3 4 1 0 5 10 15 20 25 30 0 0.4 0.6 0.8 0.2 www.freescale.net.cn www.freescale.net.cn 4/5
1 s * 1 ms * 10 s * 100 s * 100 ns * v dss max 0.001 0.1 0.01 1 10 100 10 1000 100 0.1 1 dc operation t c = 25c i d max (continuous) duty = 0.5 0.2 0.1 0.05 0.02 0.01 10 0.1 1 10 100 1 m 10 m 100 m 1 10 0.01 t p dm t duty = t/t r th(ch-c) = 1.25c/w ? 15 v 15 v i ar b vdss v dd v ds r th ? t w e as ? t ch waveform pulse width t w (s) normalized transient thermal impedance r th /r th(ch-c) avalanche energy e as (mj) channel temperature (initial) t ch (c) single pulse p d ? t c power dissipation p d (w) case temperature t c (c) r g = 25 ? , v dd = 90 v b vdss b vdss ? v dd e as = ~ l ~ i 2 ar ~ 1 2 0 40 80 120 160 25 50 75 100 125 150 i d max (pulse) * * : single pulse t c = 25c curves must be derated linearly with increase in temperature. safe operating area drain current i d (a) drain-source voltage v ds (v) this area is limited by r ds(on) 0 60 80 120 20 100 40 20 60 80 0 40 100 www.freescale.net.cn www.freescale.net.cn 5/5
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